ACE7401 Datasheet, ACE Technology

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* -30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.5A, RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.5A, RDS(ON).

P-Channel Enhancement Mode MOSFET The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.

ACE7400

ACE7401B

ACE7402A

ACE7402M

ACE7407A

ACE7409B

ACE701

ACE703

ACE705

ACE707A

ACE708

ACE709

ACE710